Calculation of Impurity Diffusion in Siiicon
https://doi.org/10.21122/1029-7448-2004-0-4-45-51
Abstract
The paper contains information about analytical solutions of diffusion equation which have been obtained for the first time. An example of calculation of diffusion processes in silicon during manufacturing of semiconductor devices is considered in the paper. Mathematical functions suitable for obtaining analytical formulae are determined with the help of a detailed analysis of physical model. Such functions make it possible to find approximations from below and above to the solution of the given problem that greatly reduces the calculation time if computer programs for three-dimensional
References
1. МОП-СБИС. Моделирование элементов и технологических процессов. - М.: Радио и связь, 1988.
2. Бубенников А. Н. Моделирование интегральных микротехнологий, приборов и схем. - М.: Высш. шк., 1989.
3. Карслоу Г., Егер Д. Теплопроводность твердых тел. - М.: Наука, 1964.
4. Ssuprem 4, Компьютерная программа для моделирования диффузионных техно¬логий; Компания Silvaco International.
5. Бондарев В. А. Вариационная формулировка задачи нестационарной теплопроводности // ИФЖ. - 1992. - № 1. - Т. 62.
6. Вопdагеv V. А. Variational method for solving non-linear problems of unsteady-state heat conduction // Int. J. Heat Mass Transfer. - Vol. 40, No. 14. - Pergamon, Oxford, 1997.
7. Технология СБИС.-М.:Мир, 1986.
Review
For citations:
Bondarev V.А. Calculation of Impurity Diffusion in Siiicon. ENERGETIKA. Proceedings of CIS higher education institutions and power engineering associations. 2004;(4):45-51. (In Russ.) https://doi.org/10.21122/1029-7448-2004-0-4-45-51
Views:
359
Email this article 