Mathematical Model of Silicon Oxidation in Microelectronics
Abstract
The paper involves analytical solutions and formulae for determination of the oxide film thickness in the silicon oxidation while using nitride mask. Calculations are based on solutions of a three-dimensional diffusion equation and new mathematical functions that are firstly defined by the author. Suitable analytical and numerical solutions based on the diffusion equation have not yet been obtained
References
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Review
For citations:
Bondarev V.A. Mathematical Model of Silicon Oxidation in Microelectronics. ENERGETIKA. Proceedings of CIS higher education institutions and power engineering associations. 2006;(2):68-73. (In Russ.)
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