Theory of the Bipolar Transistor, Taking into Account the Structure of a Solid and the Presence of Negative Ions. Part 2. Structure of a Semiconductor Solid Doped with Arsenic and Indium

Abstract

The ionization of negative ions in columnar voids is determined by temperature, as well as by the externally applied electric field strength. Due to the ionization of negative ions in the conduction band of the semiconductor base, free electrons are formed without their movement, forming a conduction current. These free electrons together create an internal electric field, which changes due to the processes of ionization and recombination. The changing electric field oscillates in the infrared region of the spectrum, which causes the displacement current to arise. The magnitude of the bias current is determined by the applied voltage between the emitter and collector, but in a rather complex way. The optimal applied voltage is ~6 V. At this voltage, the calcula-ted electric current in the emitter reaches milliamperes, and in the base – microamperes, which corresponds to experimental data. Continuous oscillation of the electric field due to ionization and recombination of negative ions in the columnar void leads to heating of the transistor by infrared radiation. Optimal operating conditions for the transistor are achieved when an additional voltage of 2.5–3.0 V is applied to the base. To reduce the heating temperature of the transistor, a massive collector is created, which is grounded.